Light polarization-based electro-optic memory.
basic_science · Level V
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- Record sourced from PubMed, PMID 42393037.
- Also identified by DOI 10.1038/s41467-026-75086-6.
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Abstract
The integration of light polarization into non-volatile memory enables angle-resolved information processing, unlocking new photonic channels for communication, computation and imaging. Yet practical polarization-sensitive memory remains rare. Here, we report a 2D rhenium disulfide (ReS<sub>2</sub>)/hafnium zirconium oxide (Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>, HZO) ferroelectric field-effect transistor in which field-driven charge separation realizes polarization-resolved memory. The redistribution of photo-generated carriers at the heterostructure interface establishes an interfacial electrostatic field that modulates HZO ferroelectric domains and encodes non-volatile states. We also find that interfacial compressive stress induced by lattice mismatch shortens the Re-Re bond, which enhances the Re-Re chain anisotropy by 3.7x (from 2.67 to 9.98). Integrated into arrays for photonic neural networks, the device attains >93% accuracy on a transformer model. Leveraging the cumulative switching property of HZO with sequential optical signals, the device enables in-situ multiplication and accumulation of inputs over time, achieving 4x area saving with <1% accuracy loss. Beyond amplitude and phase, the demonstrated electro-optic device enables optical polarization as an additional information read-out, which significantly increases the information density of photonic-based computing.