Large-area two-dimensional MoO<sub>3</sub> as a high-κ dielectric for van der Waals integration.
basic_science · Level V
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- Record sourced from PubMed, PMID 42409813.
- Also identified by DOI 10.1038/s41467-026-75196-1.
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Abstract
Large-area high-quality dielectrics are essential for the integration of two-dimensional (2D) transistors. However, this integration remains challenging, especially for conventional dielectrics that require deposition processes. Adopting van der Waals (vdW) dielectrics is attractive. Molybdenum trioxide (α-MoO<sub>3</sub>) has been demonstrated as a vdW dielectric in 2D field-effect transistors (FETs), but previous demonstrations showed limited performance and small size. Here, we grow large-area single-crystalline MoO<sub>3</sub> with uniform thickness and explore its properties as a dielectric. Single-crystalline MoO<sub>3</sub> reaches the millimeter scale and maintains a high dielectric constant of ~ 18.5, low gate leakage of approximately 10<sup>-2</sup> A cm<sup>-2</sup> at 3.0 MV cm<sup>-1,</sup> and a large breakdown field of ~ 26.75 MV cm<sup>-1</sup>. Top-gated molybdenum disulfide (MoS<sub>2</sub>) transistors exhibit an average subthreshold swing of ~ 71 mV dec<sup>-1</sup>, and an on/off current ratio exceeding 10<sup>8</sup>. Furthermore, we demonstrate MoO<sub>3</sub>-based integrated circuits and low-power complementary metal-oxide-semiconductor (CMOS) inverters.