Robust single-electron memory with quantum states manipulation.
basic_science · Level V
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- Record sourced from PubMed, PMID 42462006.
- Also identified by DOI 10.1126/science.aeg6638.
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Abstract
The ultimate goal of information storage is single-electron memory. Quantum mechanics predicts that two distinguishable quantum states can be realized by confining a single electron within an ultrasmall space. However, scaling down such devices paradoxically amplifies fringe capacitance effects, which hinders the experimental observation of single-electron memory. We report a two-dimensional single-electron memory device based on a coplanar drain-channel-source structure that suppressed fringe capacitance, exhibiting a nonvolatile threshold voltage shift of 0.5 volts after the change of a single electron. Two intriguing quantum behaviors have also been verified regarding the programming voltage. Additionally, we have predicted and observed a distinctive quantum memory effect: A quantum state is cut off by density of states scissors.