Surface Acoustic Wave-Guided Reconfigurable Memristor.

Kim, Sihyeok; Lee, Jang Woo; Ryu, Hyeonseung; Kim, Taehoon; Ko, Hayoung; Choi, Soo Ho; Kim, Young Chul; Qi, Kai et al. · ACS Nano · 2026

basic_science · Level V

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Abstract

Neuromorphic computing requires memory elements that can emulate both nonvolatile and volatile operation. However, achieving reconfigurability without trade-offs in performance or device fatigue remains a critical challenge. Conventional electrically driven memristors face difficulties in maintaining repetitive volatile states while preserving their nonvolatile state, which poses a major challenge for achieving reliable reconfigurability. Here, we report a surface acoustic wave (SAW)-stimulated memristor using a two-dimensional (2D) transition metal dichalcogenide monolayer MoS<sub>2</sub> that achieves reconfigurable memory operation in a reversible volatile mode enabled by acousto-electric modulation. SAW excitation provides contactless, strain-based control of the 2D material conductance for memristor operation, allowing dynamic and nondestructive volatile behavior without deteriorating the electrically programmed nonvolatile state. We leverage these tunable temporal dynamics to realize a SAW-driven memristive reservoir based on 2D monolayer MoS<sub>2</sub>, achieving 96.1% accuracy in a character classification task.