Ultralow-Dispersion Silicon THz Photonic Crystal Interconnects for Multichannel Datalinks.
basic_science · Level V
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- Record sourced from PubMed, PMID 42470289.
- Also identified by DOI 10.1002/adma.74150.
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Abstract
All-Silicon (Si) Terahertz (THz) interconnects are a key platform for next-generation on-chip communication, leveraging broadband photonics to connect reconfigurable electronics. Yet their potential remains largely unrealized, due to low reported data rates and a lack of systematic insight into the role of dispersion in on-chip THz data links. We address these challenges by demonstrating aggregate data rates exceeding 400 Gbps through an on-chip all-Si broadband low-dispersion THz photonic crystal waveguide-interconnect. Seven data channels deliver 452 Gbps of complex-modulated data, aided by the waveguide's low dispersion with group velocity dispersion (GVD) reaching as low as 2.9 ps<sup>2</sup> mm<sup>-1</sup>. Our THz waveguide interconnect delivers a record 9.81 Tbps aggregate figure of merit (FoM), outperforming prior THz waveguide data transfer reports. Our demonstration of high data rates, elucidating the role of GVD for on-chip THz data interconnects, and superior FoMs pave the way for all-Si THz photonic crystal waveguides as centimeter-scale on-chip interconnects for augmenting data center infrastructure.