Manipulating Structural Asymmetry in FAPbBr<sub>3</sub> Quantum Dots for High-Performance Pure-Green Spin-Polarized Light-Emitting Diodes.
basic_science · Level V
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- Record sourced from PubMed, PMID 42475167.
- Also identified by DOI 10.1021/acs.nanolett.6c01923.
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Abstract
Spin-polarized light-emitting diodes (spin-LEDs) hold promise for next-generation photonic technologies owing to their ability to directly emit circularly polarized electroluminescence. Here, we report a multifunctional chiral ligand engineering strategy to realize high-performance pure-green spin-LEDs based on FAPbBr<sub>3</sub> quantum dots (QDs). By introducing (<i>R/S</i>)-methylbenzenesulfinamide, strong coordination with surface Pb<sup>2+</sup> ions simultaneously passivates defects and induces pronounced centrosymmetry-breaking lattice distortion in FAPbBr<sub>3</sub> QDs. This structural asymmetry enhances chiroptical activity and prolongs spin-coherence lifetimes, enabling efficient spin-polarized carrier recombination. As a result, chiral FAPbBr<sub>3</sub> QDs exhibit a high photoluminescence quantum yield (98.28%) and large dissymmetry factor (8.87 × 10<sup>-2</sup>). The spin-LEDs fabricated from these QDs exhibit pure-green emission, with a maximum luminance of 17 979 cd m<sup>-2</sup>, a peak external quantum efficiency of 15.1%, and a maximum electroluminescence dissymmetry factor of 1.76 × 10<sup>-1</sup> at room temperature. This work demonstrates that chiral MBS ligands can simultaneously improve optoelectronic quality and introduce structural asymmetry in perovskite quantum dots, representing a promising route toward practical high-performance spin-LEDs.