Electrochemical Metallization-Induced Localized Phase Transition for Integrated Memory and Neuromorphic Computing.
basic_science · Level V
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- Record sourced from PubMed, PMID 42584269.
- Also identified by DOI 10.1021/acs.nanolett.6c02862.
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Abstract
The energy inefficiency associated with the von Neumann architecture has driven extensive interest in memory devices capable of integrating storage and computation. Nevertheless, conventional phase-change random access memory (PCRAM) still suffers from fundamental device-level limitations because it relies on bulk Joule heating, causing severe thermal dissipation and limited switching efficiency. This work proposes an electrochemical metallization (ECM)-induced localized phase-transition strategy based on Ag/C-doped Sb2Te (C2ST21). Transient Ag conductive pathways confine current and thermal accumulation to realize localized phase-transition switching. Carbon doping stabilizes the amorphous lattice and suppresses Ag diffusion for improved reliability. Benefiting from synergistic ECM-phase transition coupling, the device achieves 6 ns ultrafast switching, 0.6 pJ ultralow RESET energy, and 4 × 105 cycle endurance. Its highly linear conductance modulation enables 96.2% MNIST recognition accuracy, offering a feasible route for energy-efficient neuromorphic computing systems.