Highly Tunable Schottky Barrier to 2D Semiconductors Enabled by an Inorganic-Molecular-Crystal Tunneling Layer.
basic_science · Level V
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- Record sourced from PubMed, PMID 42631580.
- Also identified by DOI 10.1002/adma.74761.
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Abstract
Effective tuning of the Schottky barrier, which determines charge transport across the metal-semiconductor interface, is essential for optimizing the performance of electronics and optoelectronic devices. However, interfacial disorders and orbital overlap between metals and semiconductors induce Fermi-level pinning (FLP), making the Schottky barrier height (SBH) largely insensitive to metal work function. Here, we demonstrate that depositing an ultrathin inorganic molecular crystal layer of Sb<sub>2</sub>O<sub>3</sub> between metal and 2D semiconductors can eliminate FLP, enabling highly tunable SBH modulation. Owing to its van der Waals structure, Sb<sub>2</sub>O<sub>3</sub> introduces no excess defects and protects the fragile 2D channel from metal deposition damage, yielding a clean, defect-free interface. Incorporation of Sb<sub>2</sub>O<sub>3</sub> tunneling layer significantly reduces the SBH in 2D MoS<sub>2</sub> transistors, and the polarity of 2D WSe<sub>2</sub>-based FET can be switched from n-type to p-type via adjusting the contact metal work function. The pinning factor turns from -0.11 to around -0.93, approaching the ideal Mott-Schottky limit. This scalable strategy offers broad applicability in high-performance 2D electronics.