Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit.
basic_science · Level V
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- Record sourced from PubMed, PMID 42658935.
- Also identified by DOI 10.1126/science.adx6059.
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Abstract
The International Roadmap for Devices and Systems (IRDS) has identified the tunnel field-effect transistor (TFET) as the most promising next-generation logic device that enables sustainable downscaling in driving voltage and power consumption. Demonstrating an acceptable sub-Boltzmann-limit ON current (namely <i>I</i><sub>60</sub>, the current level when a TFET switches to a subthreshold swing level of 60 millivolts per decade) and current-switching ratio has presented a formidable challenge. We report a TFET based on a bismuth/indium selenide (Bi/InSe) heterostructure that exhibits an <i>I</i><sub>60</sub> of up to ~10 microamperes per micrometer and a current-switching ratio of >10<sup>7</sup>. We attribute such promising TFETs to precise material design, clean interfaces fabricated under vacuum, and band engineering based on subthreshold swing physics. Our results demonstrate a high-performance basic building block that meets the IRDS requirements for next-generation integrated circuits.