High-efficiency, long-lived lead-free perovskite light-emitting diodes.
basic_science · Level V
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- Record sourced from PubMed, PMID 42658957.
- Also identified by DOI 10.1126/science.aeg8955.
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Abstract
Tin halide perovskite light-emitting diodes (PeLEDs) offer promise due to their solution processability and low toxicity, yet low efficiency and poor stability hinder practical use. We found that electroluminescence failure in CsSnI<sub>3</sub> is primarily driven by excessive hole injection-triggered electrochemical Sn<sup>2+</sup> oxidation and an irreversible phase transition to Cs<sub>2</sub>SnI<sub>6</sub>. Through a dual-side optimization strategy combining formamidine doping with triphenylphosphine oxide modification to stabilize the perovskite lattice, suppress nonradiative recombination, and balance carrier transport, we demonstrate highly efficient near-infrared PeLEDs. These lead-free devices achieve a peak external quantum efficiency of 21.2% at 963 nanometers and a maximum radiance of 195.8 watts per steradian per square meter (W sr<sup>-1</sup> m<sup>-2</sup>). Notably, the operating half-lifetime reaches 920.5 hours at 7.1 W sr<sup>-1</sup> m<sup>-2</sup>, providing pathways for high-performance lead-free PeLEDs.