Interfacial Gap Switching in MXene Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MoS<sub>2</sub> Memristors.
basic_science · Level V
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- Record sourced from PubMed, PMID 42723217.
- Also identified by DOI 10.1002/adma.74953.
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Abstract
Resistive-switching devices are essential building blocks for advanced multifunctional integrated circuits (ICs), with four major switching mechanisms (ion migration, phase change, magnetization orientation, and ferroelectric polarization) having been extensively studied, each facing inherent limitations for practical applications. Herein, we disclose an interfacial gap switching mechanism in a two-terminal Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub>/MoS<sub>2</sub> device, fundamentally distinct from those conventional mechanisms. The switching mechanism relies on the interfacial gap modulation between the metallic MXene Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> layer and semiconducting MoS<sub>2</sub> layer under applied bias, leading to reversible switching between low resistance state and high resistance state. The gap modulation phenomenon was further observed in three-terminal transistor devices. The working principle takes advantage of MXene Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> with high concentration of negative charges, electrostatically interacting with MoS<sub>2</sub> triggered by bias or gating dynamically. Further optimization of memristor device exhibited ultra-low cycle-to-cycle variation, with a set voltage standard deviation of 40 mV and coefficient of variation of 2.31%, outperforming most reported 2D memristors. This discovery of gap modulation provides new insights into memristor device physics and offers a unique idea to build 2D memristor architecture for non-volatile memory related applications.