Fully reversible electric-field control of magnetization in Fe<sub>3</sub>GaTe<sub>2</sub>/CuInP<sub>2</sub>S<sub>6</sub> heterostructure.
basic_science · Level V
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- Record sourced from PubMed, PMID 42744820.
- Also identified by DOI 10.1038/s41467-026-76808-6.
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Abstract
Two-dimensional van der Waals magnetic materials offer a promising platform for next-generation spintronic devices, yet achieving fully reversible and low-power voltage control of magnetization switching remains challenging. In this work, a quasi-nonvolatile and fully reversible electrical manipulation of perpendicular magnetic anisotropy is demonstrated in a horizontally-asymmetric Fe<sub>3</sub>GaTe<sub>2</sub>/CuInP<sub>2</sub>S<sub>6</sub> van der Waals heterostructure at room temperature. By leveraging the in-plane migration and accumulation of Cu ions in CuInP<sub>2</sub>S<sub>6</sub> under ultralow voltage pulses (0.9 V, ~16.66 kV/m), reversible modulation of the magnetic properties in the adjacent Fe<sub>3</sub>GaTe<sub>2</sub> layer is achieved. Anomalous Hall effect and magneto-optical Kerr effect measurements confirm a cyclically stable modulation of the magnetic states, demonstrating a remarkably high voltage-controlled magnetic anisotropy coefficient (~1.0 × 10<sup>6</sup> fJ/V·m). Furthermore, it is demonstrated that the heterostructure, when integrated with spin-orbit torque devices, enables both voltage-controlled magnetic anisotropy and field-free switching of magnetization. This work provides a viable path toward energy-efficient two-dimensional spintronic devices.